STPSC1206 diode equivalent, 600v power schottky silicon carbide diode.
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No reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
Description
These diodes are manufactured using silicon.
NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.
These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery c.
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